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20206 www.vishay.com 120 document number 84672 rev. 1.1, 03-jul-06 tfbs4650 vishay semiconductors infrared transceiver 9.6 kbit/s to 115.2 kbit/s (sir) description the tfbs4650 is one of the smallest irda ? compliant transceivers available. it supports data rates up to 115 kbit/s. the transceiver consists of a pin photo- diode, infrared emitter, and control ic in a single pack- age. features ? compliant with the irda physical layer irphy 1.4 (low power specification, 9.6 kbit/s to 115.2 kbit/s) ? link distance: 30 cm/20 cm full 15 cone with standard or low power irda, respec- tively. emission intensity can be set by an external resistor to increase the range for extended low power spec to > 50 cm ? typical transmission distance to standard device: 50 cm ? small package - l 6.8 mm x w 2.8 mm x h 1.6 mm ? low current consumption 75 a idle at 3.6 v ? shutdown current 10 na typical at 25 c ? operates from 2.4 v to 3.6 v within specification over full temperature range from - 25 c to + 85 c ? split power supply, emitter can be driven by a sep- arate power supply not loading the regulated. u.s. pat. no. 6,157,476 ? lead (pb)-free device ? qualified for lead (pb)-free and sn/pb processing (msl4) ? device in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? mobile phone ? pdas parts table part description qty / reel tfbs4650-tr1 oriented in carrier tape for side view surface mounting 1000 pcs TFBS4650-TR3 oriented in carrier tape for side view surface mounting 2500 pcs e4
tfbs4650 document number 84672 rev. 1.1, 03-jul-06 vishay semiconductors www.vishay.com 121 functional block diagram pin description pinout tfbs4650, bottom view weight 0.05 g ired driver txd sd gnd v cc ireda rxd a mplifie r comparator tri-state driver mode control pd ired asic iredc 192 8 3 pin number function description i/o active 1 ireda ired anode, connected via a current limiting resistor to v cc2 . a separate unregulated power supply can be used. 2 iredc ired cathode, do not connect for standard operation 3 txd transmitter data input. setting this input above the threshold turns on the transmitter. this input switches the ired with the maximum transmit pulse width of about 50 s. ihigh 4 rxd receiver output. normally high, goes low for a defined pulse duration with the rising edge of the optical input signal. output is a cmos tri-state driver, which swings between ground and v cc . receiver echoes transmitter output. olow 5 sd shut down. logic low at this input enables the receiver, enables the transmitter, and un-tri-states the receiver output. it must be driven high for shutting down the transceiver. ihigh 6v cc power supply, 2.4 v to 3.6 v. this pin provides power for the receiver and transmitter drive section. connect v cc1 via an optional filter. 7 gnd ground 19284
www.vishay.com 122 document number 84672 rev. 1.1, 03-jul-06 tfbs4650 vishay semiconductors absolute maximum ratings reference point pin, gnd unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. *) due to the internal limitation measur es the device is a "class1" device. **) irda specifies the max. intensity with 500 mw/sr ***) sn/pb-free soldering. the product pas sed vishay?s standard convection reflow profile soldering test. definitions: in the vishay transceiver data sheets the following nomenclature is used for defining the irda operating modes: sir: 2.4 kbit/s to 115.2 kbit/s, equival ent to the basic serial infrared standard wi th the physical layer version irphy 1.0 mir: 576 kbit/s to 1152 kbit/s fir: 4 mbit/s vfir: 16 mbit/s mir and fir were implemented with irphy 1.1, followed by irph y 1.2, adding the sir low power standard. irphy 1.3 extended the l ow power option to mir and fir and vfir was added with irphy 1.4. a new version of the standard in any case obsoletes the former v ersion. parameter test conditions symbol min ty p. max unit supply voltage range, transceiver 0 v < v cc2 < 6 v v cc1 - 0.5 6.0 v supply voltage range, transmitter 0 v < v cc1 < 3.6 v v cc2 - 0.5 6.0 v voltage at rxd all states v in - 0.5 v cc + 0.5 v input voltage range, transmitter txd independent of v cc1 or v cc2 v in - 0.5 6.0 v input currents for all pins, except ired anode pin - 40 40 ma output sinking current 20 ma power dissipation p d 250 mw junction temperature t j 125 c ambient temperature range (operating) t amb - 25 + 85 c storage temperature range t stg - 40 + 100 c soldering temperature ***) see section recommended solder profile c repetitive pulse output current < 90 s, t on < 20 % i ired (rp) 500 ma average output current (transmitter) i ired (dc) 100 ma virtual source size me thod: (1-1/e) encircled energy d0.8 mm maximum intensity for class 1 iec60825-1 or en60825-1, edition jan. 2001 i e *) (500) **) mw/sr
tfbs4650 document number 84672 rev. 1.1, 03-jul-06 vishay semiconductors www.vishay.com 123 electrical characteristics transceiver t amb = 25 c, v cc = 2.4 v to 3.6 v unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. parameter test conditions symbol min ty p. max unit supply voltage range v cc 2.4 3.6 v dynamic supply current idle, dark ambient sd = low (< 0.8 v), e eamb = 0 klx, e e < 4 mw/m 2 - 25 c t + 85 c i cc 90 130 a idle, dark ambient sd = low (< 0.8 v), e eamb = 0 klx, e e < 4 mw/m 2 t = + 25 c i cc 75 a peak supply current during transmission sd = low, txd = high i ccpk 23ma shutdown supply current dark ambient sd = high (> v cc - 0.5 v), t = 25 c, ee = 0 klx i sd 0.1 a shutdown supply current, dark ambient sd = high (> v cc - 0.5 v), - 25 c t + 85 c i sd 1.0 a operating temperature range t a - 25 + 85 c input voltage low (txd, sd) v il - 0.5 0.5 v input voltage high v cc = 2.4 v to 3.6 v v ih v cc - 0.5 6.0 v input voltage threshold sd v cc = 2.4 v to 3.6 v 0.9 1.35 1.8 v output voltage low v cc = 2.4 v to 3.6 v cload = 15 pf v ol - 0.5 v cc x 0.15 v output voltage high v cc = 2.4 v to 3.6 v c load = 15 pf v oh v cc x 0.8 v cc + 0.5 v rxd to v cc pull-up impedance sd = v cc v cc = 2.4 v to 5 v r rxd 500 k input capacitance (txd, sd) c i 6pf
www.vishay.com 124 document number 84672 rev. 1.1, 03-jul-06 tfbs4650 vishay semiconductors optoelectronic characteristics receiver t amb = 25 c, v cc = 2.4 v to 3.6 v unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. *) this parameter reflects the backlight te st of the irda physical layer specificati on to guarantee immunity against light from f luorescent lamps **) irda sensitivity defini tion: minimum irradiance e e in angular range, power per unit area. the receiver must meet the ber specification while the source is operating at the mini mum intensity in angular range into the mini mum half-angle range at the maximum link l ength ***) maximum irradiance e e in angular range, power per unit area. the optical deliv ered to the detector by a source operating at the max- imum intensity in angular range at minimum link length must not cause receiver overdr ive distortion and possible related link e rrors. if placed at the active output interface reference plane of the trans mitter, the receiver must meet its bit error ratio (ber) spec ification. ****) rxd output is edge triggered by the risi ng edge of the optical input signal. the out put pulse duration is independent of the i nput pulse duration. for more definitions see the document ?symbols and terminology ? on the vishay website (htt p://www.vishay.com/docs/82512/82512.p df). parameter test conditions symbol min ty p. max unit sensitivity: minimum irradiance ee in angular range *)**) 9.6 kbit/s to 115.2 kbit/s = 850 nm to 900 nm e e 40 (4.0) 81 (8.1) mw/m 2 (w/cm 2 ) maximum irradiance ee in angular range ***) = 850 nm to 900 nm e e 5 (500) kw/m 2 (mw/cm 2 ) no receiver output input irradiance according to irda irphy 1.4, appendix a1, fluorescent light specification e e 4 (0.4) mw/m 2 (w/cm 2 ) rise time of output signal 10 % to 90 %, c l = 15 pf t r (rxd) 20 100 ns fall time of output signal 90 % to 10 %, c l = 15 pf t f (rxd) 20 100 ns rxd pulse width of output signal, 50%****) input pulse width 1.63 s t pw 1.7 2.0 2.9 s receiver start up time power on delay 100 150 s latency t l 50 200 s
tfbs4650 document number 84672 rev. 1.1, 03-jul-06 vishay semiconductors www.vishay.com 125 transmitter t amb = 25 c, v cc = 2.4 v to 3.6 v unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. *) the radiant intensity can be adjusted by the external current li miting resistor to adapt the intensity to the desired value. t he given value is for minimum current consumption. this transceiver can be adapted to > 50 cm operat ion by increasing the current to > 200 ma, e.g. operating the transceiver without curr ent control resistor (i.e. r1 = 0 ) and using the internal current control. table 1. truth table parameter test conditions symbol min ty p. max unit ired operating current, current controlled the ired current is internally controlled but also can be reduced by an external resistor r1 i d 200 400 ma output leakage ired current tamb = 85c i ired 1a output radiant intensity *) = 0, 15, txd = high, sd = low, v cc1 = 3.0 v, v cc2 = 3.0 v, r1 = 30 (resulting in about 50 ma drive current) i e 4 150 mw/sr output radiant intensity *) = 0, 15, txd = high, sd = low, v cc1 = 3.0 v, v cc2 = 3.0 v, r1 = 0 , if = 300 ma i e 25 mw/sr output radiant intensity *) v cc1 = 5.0 v, = 0, 15 txd = low or sd = high (receiver is inac tive as long as sd = high) i e 0.04 mw/sr saturation voltage of ired driver v cc = 3.0 v, if = 50 ma v cesat 0.4 v peak - emission wavelength p 880 886 900 nm optical rise time, optical fall time t ropt , t fopt 20 100 ns optical output pulse duration input pulse width t < 30 s input pulse width t 30 s t opt t opt 30 t 50 300 s s optical output pulse duration input pulse width t = 1.63 s t opt 1.45 1.61 2.2 s optical overshoot 20 % inputs outputs sd txd optical input irradiance mw/m 2 rxd transmitter high x x tri-state floating with a weak pull-up to the supply voltage 0 low high x low (echo on) i e low high > 50 s x high 0 low low < 4 high 0 low low > min. irradiance e e < max. irradiance e e low (active) 0 low low > max. irradiance e e x0
www.vishay.com 126 document number 84672 rev. 1.1, 03-jul-06 tfbs4650 vishay semiconductors recommended circuit diagram operated at a clean low impedance power supply the tfbs4650 needs only one additional external com- ponent when the ired drive current should be mini- mized for minimum current consumption according the low power irda standard. when combined opera- tion in irda and remote control is intended no cur- rent limiting resistor is recommended. however, depending on the entire system design and board layout, additional components may be required (see figure 1). when long wires are used for bench tests, the capacitors are ma ndatory for testing rise/fall time correctly. the capacitor c1 is buffer ing the supply voltage v cc2 and eliminates the inductance of the power supply line. this one should be a small ceramic version or other fast capacitor to guarantee the fast rise time of the ired current. the resi stor r1 is necessary for controlling the ired drive current when the internally controlled current is too high for the application. vishay transceivers integrate a sensitive receiver and a built-in power driver. the combination of both needs a careful circuit board layout. the use of thin, long, resistive and inductive wiring should be avoided. the inputs (txd, sd) and the output rxd should be directly (dc) coupled to the i/o circuit. the capacitor c2 co mbined with the resistor r2 is the low pass filter for smooth ing the supply voltage. as already stated above r2, c1 and c2 are optional and depend on the quality of the supply voltages v ccx and injected noise. an unstable power supply with dropping voltage during transmission may reduce the sensitivity (and transmission range) of the trans- ceiver. the placement of these parts is critical. it is strongly recommended to position c2 as close as possible to the transceiver power supply pins. when connecting the described circuit to the power supply, low impedance wiring should be used. in case of extended wiring the inductance of the power supply can cause dynamically a voltage drop at v cc2 . often some power supplies are not able to follow the fast current is rise time. in that case another 10 f cap at v cc2 will be helpful. keep in mind that basic rf-design rules for circuit design should be taken into account. especially longer signal lines should not be used without termina- tion. see e.g. "the art of electronics" paul horowitz, wienfield hill, 1989, cambridge university press, isbn: 0521370957. table 2. recommended application circuit components table 3. recommended resistor r1 [ ] figure 1. recommended a pplication circuit ired anode v cc ground v cc2 v cc1 gnd sd txd rxd sd txd rxd r2 c1 c2 ired cathode 19286 r1 component recommended value c1, c2 0.1 f, ceramic vishay part# vj 1206 y 104 j xxmt r1 see table 3 r2 47 , 0.125 w (v cc1 = 3 v) v cc2 [v] minimized current consumption, irda low power compliant 2.7 24 3.0 30 3.3 36
tfbs4650 document number 84672 rev. 1.1, 03-jul-06 vishay semiconductors www.vishay.com 127 recommended solder profiles solder profile for sn/pb soldering lead (pb)-free, recommended solder profile the tfbs4650 is a lead (pb)-free transceiver and qualified for lead (pb)-free processing. for lead (pb)-free solder paste like sn(3.0-4.0)ag(0.5-0.9)cu, there are two standard reflow profiles: ramp-soak- spike (rss) and ramp-to-spike (rts). the ramp- soak-spike profile was developed primarily for reflow ovens heated by infrared radiation. with widespread use of forced convection reflow ovens the ramp-to- spike profile is used increas ingly. shown below in fig- ure 3 is vishay's recommended profiles for use with the tfbs4650 transceivers. for more details please refer to application note: smd assembly instruction. wave soldering for tfduxxxx and tfbsxxxx transceiver devices wave soldering is not recommended. manual soldering manual soldering is the standard method for lab use. however, for a production process it cannot be rec- ommended because the risk of damage is highly dependent on the experience of the operator. never- theless, we added a chapter to the above mentioned application note, describing manual soldering and desoldering. storage the storage and drying processes for all vishay transceivers (tfduxxxx and tfbsxxx) are equiva- lent to msl4. the data for the drying procedure is given on labels on the packing and also in the application note "taping, labeling, storage and packing" (http://www.vishay.com/docs/82601/82601.pdf). figure 2. recommended solder profile for sn/pb soldering 0 20 40 60 8 0 100 120 140 160 1 8 0 200 220 240 260 0 50 100 150 200 250 300 350 time/s temperat u re/c 2...4 c/s 2...4 c/s 10 s max. at 230 c 120 s...1 8 0 s 160 c max. 240 c max. 90 s max. 19431 figure 3. solder profile, rss recommendation 0 20 40 60 8 0 100 120 140 160 1 8 0 200 220 240 260 2 8 0 0 50 100 150 200 250 300 350 time/s temperat u re/c 20 s 2 c...4 c/s 2 c...4 c/s 90 s...120 s t 217 c for 50 s max t peak = 260 c max. 50 s max. t 255 c for 20 s max 19261
www.vishay.com 128 document number 84672 rev. 1.1, 03-jul-06 tfbs4650 vishay semiconductors package dimensions figure 4. tfbs4650 mechanical dimensions, tolerance 0.2 mm, if not otherwise mentioned figure 5. tfbs4650 soldering footprint, tolerance 0.2 mm, if not otherwise mentioned 19322 19729
tfbs4650 document number 84672 rev. 1.1, 03-jul-06 vishay semiconductors www.vishay.com 129 reel dimensions 14017 dra w ing- n o.: 9. 8 00-5090.01-4 iss u e: 1; 29.11.05 tape width a max. n w 1 min. w 2 max. w 3 min. w 3 max. mm mm mm mm mm mm mm 16 330 50 16.4 22.4 15.9 19.4
www.vishay.com 130 document number 84672 rev. 1.1, 03-jul-06 tfbs4650 vishay semiconductors tape dimensions in mm 19783
www.vishay.com 131 document number 84672 rev. 1.1, 03-jul-06 tfbs4650 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.

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